IAUZ40N10S5N130ATMA1 vs IAUZ30N10S5L240ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ40N10S5N130ATMA1 disebabkan oleh Infineon dan IAUZ30N10S5L240ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUZ40N10S5N130ATMA1 IAUZ30N10S5L240ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IAUZ40N10S5N130ATMA1 —
Technology OptiMOS 5 (super-junction trench) OptiMOS 5 (trench)
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc=25°C 40 A —
Pulsed Drain Current (IDM) 160 A —
RDS(on) max at VGS=10V 13 mΩ —
RDS(on) typical 10 mΩ —
Maximum Power Dissipation (Tc) 68 W —
Kemasan PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (TJ) -55°C to +175°C (junction, automotive grade)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Lead-Free / RoHS ROHS3 Compliant —
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D, Tc) — 30 A
R_DS(on) max at V_GS=10V — 24 mΩ
Gate-Source Voltage (V_GS) max — ±20 V
Gate Charge (Q_g) typ — 14 nC at V_GS=10V
Input Capacitance (C_iss) typ — 832 pF at V_DS=50V
Power Dissipation (P_D, Tc) — 45.5 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) value]
Status RoHS — Compliant
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

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