IAUZ40N10S5N130ATMA1 vs IAUZ40N08S5N100ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ40N10S5N130ATMA1 disebabkan oleh Infineon dan IAUZ40N08S5N100ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ40N08S5N100ATMA1 IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N08S5N100ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUZ40N10S5N130ATMA1 IAUZ40N08S5N100ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IAUZ40N10S5N130ATMA1 —
Technology OptiMOS 5 (super-junction trench) OptiMOS-5 N-Channel MOSFET
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 80 V
Continuous Drain Current (ID) at Tc=25°C 40 A —
Pulsed Drain Current (IDM) 160 A —
RDS(on) max at VGS=10V 13 mΩ —
RDS(on) typical 10 mΩ —
Maximum Power Dissipation (Tc) 68 W —
Kemasan PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm PG-TDSON-8 (S3O8) 3.3 × 3.3 mm
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (TJ) -55 °C to +175 °C (TJ)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Lead-Free / RoHS ROHS3 Compliant —
Continuous Drain Current (ID, Tc=25°C) — 40 A
Power Dissipation (PD, Tc=25°C) — 68 W
On-Resistance RDS(on) max — 10 mΩ @ VGS=10 V, ID=20 A
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg typ — 24.2 nC @ VGS=10 V
Input Capacitance Ciss — 1591 pF @ VDS=40 V
Gate-Source Voltage VGS max — ±20 V
Aras MSL — [DATA_NEEDED: MSL rating]
Status RoHS — Compliant
Channel Type — N-Channel

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