IAUZN04S7L030ATMA1 vs IAUC100N04S6L020ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZN04S7L030ATMA1 disebabkan oleh Infineon dan IAUC100N04S6L020ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUZN04S7L030ATMA1 IAUC100N04S6L020ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25°C) 60 A —
Pulsed Drain Current (IDM, Tj) 100 A —
On-State Resistance (RDS(on), VGS=10V max) 3.05 mΩ —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD, Tc=25°C) 58 W —
Operating Junction Temperature (Tj) -55C to +175C —
Technology Family OptiMOS-7 —
Channel Type N-Channel —
Kemasan PG-TSDSON-8-44 (S3O8) 3x3 mm² PG-TDSON-8 (SS08, 5x6 mm leadless)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (Automotive OptiMOS) —
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL rating] —
FET Type — N-Channel
Drain-Source Breakdown Voltage V(BR)DSS — 40 V
Continuous Drain Current (Tc) — 100 A
Power Dissipation (Tc) — 75 W
RDS(on) Maximum @ VGS=10V, ID=50A — 2.04 mΩ
RDS(on) Typical — 2.0 mΩ
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) Typical — 2.0 V
Technology — OptiMOS 6
Gambaran Suhu Operasi — -55 °C to +175 °C (TJ)
Qualification — Automotive grade
Packaging — Tape & Reel (TMA1)
Status RoHS — Compliant

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