IPB014N06NATMA1 vs ISC045N03L5SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB014N06NATMA1 disebabkan oleh Infineon dan ISC045N03L5SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB014N06NATMA1 ISC045N03L5SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at Ta 34 A —
Continuous Drain Current (ID) at Tc 180 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 214 W —
On-Resistance RDS(on) max 1.4 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TO263-7 (D2PAK-7) SuperSO8 5x6 (PG-TDSON-8-6)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 (trench-gate) OptiMOS 5 / Trench
Avalanche Rating 100% avalanche tested —
Qualification JEDEC qualified for target applications —
Primary Application Synchronous rectification, motor control —
Manufacturer — Infineon Technologies
Part Number — ISC045N03L5SATMA1
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TC=25°C — 63 A
On-Resistance RDS(on) max @ VGS=10V — 4.5 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 2 V @ ID=250 µA
Total Gate Charge (Qg) — 13 nC @ VGS=10 V
Input Capacitance (Ciss) — 870 pF @ VDS=15 V
Power Dissipation (PD) at TA=25°C — 2.5 W
Power Dissipation (PD) at TC=25°C — 30 W
Gambaran Suhu Operasi — -55 °C to +150 °C
Status RoHS — Compliant

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