IPB200N25N3GATMA1 vs BSC0902NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB200N25N3GATMA1 disebabkan oleh Infineon dan BSC0902NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB200N25N3GATMA1 BSC0902NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 3 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Kemasan PG-TO263-3 (D2PAK) PG-TDSON-8-6 (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Drain-Source Voltage (V_DS) 250 V —
Continuous Drain Current (I_D) at T_C 64 A —
Power Dissipation (P_D) at T_C 300 W —
R_DS(on) max at V_GS=10V 20 mOhm —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical/max] —
Technology OptiMOS 3 (Trench) —
Gate Charge (Q_g) [DATA_NEEDED: Q_g typical] —
Gambaran Suhu Operasi -55C to +175C -55C to +150C (Tj)
Status RoHS Compliant —
Boson Bebas Yes (per Infineon OptiMOS family datasheet) Yes, per IEC 61249-2-21
Aras MSL 1 (per JEDEC J-STD-020) —
Kiraan Pin 3 (2+tab) —
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Avalanche Rated — Yes (100% avalanche tested)

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