IPB35N10S3L26ATMA2 vs IPB35N10S3L26ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB35N10S3L26ATMA2 disebabkan oleh Infineon dan IPB35N10S3L26ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPB35N10S3L26ATMA2 IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPB35N10S3L26ATMA2 IPB35N10S3L26ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS Power-Transistor OptiMOS-T
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tc 35 A —
Arus Alir Gesa 180 A —
Power Dissipation (Pd) at Tc 71 W —
RDS(on) (typical) 26.3 mOhm —
Kemasan PG-TO263-3-2 (D2PAK) —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C —
Bilangan Pin 3 —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Automotive Qualified Yes (per Infineon product page classification) —
Channel Type — N-Channel
Maximum Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC — 35 A
Power Dissipation (PD) at TC — 71 W
Package Type — PG-TO263-3 (D2PAK-2)
Kiraan Pin — 3 (Gate, Drain, Source)
Channel Mode — Enhancement
RDS(on) (typical per Infineon product page) — 26.3 mΩ
Typical Gate Charge Qg @ Vgs — 80 nC
Maximum Drain-Source Resistance Rds — 1.7 mΩ (per RS Components listing)
Minimum Operating Temperature — -55 C
Maximum Power Dissipation Pd — 81 W (per RS Components listing)
AEC-Q101 Qualification — [DATA_NEEDED: AEC-Q101 qualification status]

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