IPB60R165CPATMA1 vs IPD60R385CPATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R165CPATMA1 disebabkan oleh Infineon dan IPD60R385CPATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB60R165CPATMA1 IPD60R385CPATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolMOS CP (superjunction, N-Channel) —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 21 A —
Power Dissipation (PD, Tc=25°C) 192 W —
On-Resistance RDS(on), max (VGS=10V) 165 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Total Gate Charge (Qg, typ) [DATA_NEEDED: Qg typical value] —
Operating Temperature Range (TJ) -55°C to +150°C —
Kemasan PG-TO263-3-2 (D2PAK-2) —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant (Pb-free lead plating) Compliant
JEDEC Qualification Qualified per JEDEC for target applications —
dv/dt Ruggedness Extreme dv/dt rated —
Polarity / Channel N-Channel —
Manufacturer — Infineon Technologies
Series — CoolMOS™ CP (5th generation)
FET Type — N-Channel
Drain-Source Voltage (V(BR)DSS) — 600 V
Drain-Source On-Resistance (RDS(on)) — 385 mΩ (typ, VGS = 10 V)
Continuous Drain Current (ID) at TC=25°C — 9 A
Pulsed Drain Current (IDM) — 27 A
Power Dissipation (PD) at TC=25°C — 83 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) — 18 nC (typ)
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Suhu Hubungan Operasi — -55 °C to +150 °C
Kemasan / Case — PG-TO252-3 (DPAK)
Kiraan Pin — 3 (Gate, Drain, Source; tab = Drain)
Aras MSL — 1 (per JEDEC J-STD-020)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga