IPB60R165CPATMA1 vs IPD60R385CPATMA1 比較
詳細並排比較 IPB60R165CPATMA1 由 Infineon 與 IPD60R385CPATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 ✓ 啟用中
規格比較
| 參數 | IPB60R165CPATMA1 | IPD60R385CPATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | CoolMOS CP (superjunction, N-Channel) | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 21 A | — |
| Power Dissipation (PD, Tc=25°C) | 192 W | — |
| On-Resistance RDS(on), max (VGS=10V) | 165 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | — |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | — |
| Operating Temperature Range (TJ) | -55°C to +150°C | — |
| 封裝 | PG-TO263-3-2 (D2PAK-2) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant (Pb-free lead plating) | Compliant |
| JEDEC Qualification | Qualified per JEDEC for target applications | — |
| dv/dt Ruggedness | Extreme dv/dt rated | — |
| Polarity / Channel | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS™ CP (5th generation) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 600 V |
| Drain-Source On-Resistance (RDS(on)) | — | 385 mΩ (typ, VGS = 10 V) |
| Continuous Drain Current (ID) at TC=25°C | — | 9 A |
| Pulsed Drain Current (IDM) | — | 27 A |
| Power Dissipation (PD) at TC=25°C | — | 83 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) | — | 18 nC (typ) |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| 工作接面溫度 | — | -55 °C to +150 °C |
| 封裝 / 外殼 | — | PG-TO252-3 (DPAK) |
| 腳位數 | — | 3 (Gate, Drain, Source; tab = Drain) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |