IPD034N06N3GATMA1 vs IPD031N06L3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD034N06N3GATMA1 disebabkan oleh Infineon dan IPD031N06L3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD034N06N3GATMA1 IPD031N06L3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 3 OptiMOS 3
Technology N-Channel Trench MOSFET (OptiMOS 3) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc 100 A —
Maximum Power Dissipation (Ptot) 167 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm —
Gate Threshold Voltage VGS(th) 4 V at 93 uA —
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] —
Kemasan PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Pin Configuration 3-Pin (2 + Tab) —
Gambaran Suhu Operasi [DATA_NEEDED: Tj min/max] -55°C to +175°C
Status RoHS Compliant (Pb-free green finish) Compliant
Automotive Qualified Yes (per Infineon product page) —
Aras MSL [DATA_NEEDED: MSL rating] 1 (Unlimited)
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 100 A
Pulsed Drain Current (IDM) — 400 A
Maximum Power Dissipation (PD) at TC=25°C — 167 W
RDS(on) Max at VGS=10V — 3.1 mΩ
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.2 V
Gate Drive Voltage (Max RDS(on)) — 4.5 V, 10 V
Total Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typical value]

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