IPD038N06NF2SATMA1 vs BSC054N04NSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD038N06NF2SATMA1 disebabkan oleh Infineon dan BSC054N04NSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD038N06NF2SATMA1 | BSC054N04NSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS (Trench) | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Continuous Drain Current (ID) at TA=25°C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΩ max | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | — |
| Input Capacitance (Ciss) | 6700 pF | — |
| Output Capacitance (Coss) | 670 pF | — |
| Reverse Transfer Capacitance (Crss) | 43 pF | — |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| Suhu Hubungan Operasi | -55°C to +175°C | — |
| Kemasan | PG-TO252-3 (DPAK) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Channel Mode | Enhancement | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC054N04NSGATMA1 |
| Continuous Drain Current (ID) at Tc=25C | — | 81 A |
| Continuous Drain Current (ID) at Ta=25C | — | 17 A |
| On-Resistance RDS(on) max at VGS=10V | — | 5.4 mOhm |
| Power Dissipation at Tc=25C | — | 57 W |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Gambaran Suhu Operasi | — | -55C to +150C |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Gate Drive Voltage (recommended) | — | 10 V |
| Lead-Free Reflow | — | Yes |