IPD082N10N3GATMA1 vs BSC0906NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD082N10N3GATMA1 disebabkan oleh Infineon dan BSC0906NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD082N10N3GATMA1 BSC0906NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD082N10N3GATMA1 —
Manufacturer Infineon Technologies —
Technology OptiMOS 3 (Trench N-Channel) OptiMOS
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ Tc=25°C 80 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10 V 8.2 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/max] [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: Qg @ VGS=10V]
Power Dissipation (PD) @ Tc=25°C 125 W —
Suhu Hubungan Operasi -55°C to +175°C —
Kemasan / Case PG-TO252-3 (DPAK), surface mount —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) 8
Status RoHS Compliant Compliant
Automotive Qualified (AEC-Q101) Not applicable (industrial/consumer grade) —
Lead-Free Yes —
Aras MSL 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 18 A
Continuous Drain Current (ID) at Tc — 63 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Kemasan — PG-TDSON-8-6 (SuperSO8, 5x6 mm)
RDS(on) max (typical reference) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gambaran Suhu Operasi — -55C to +150C (junction, typical)

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