IPD135N03LGATMA1 vs BSC019N04NSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD135N03LGATMA1 disebabkan oleh Infineon dan BSC019N04NSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD135N03LGATMA1 IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD135N03LGATMA1 BSC019N04NSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS™ —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) 30 A (Tc) —
Power Dissipation (PD) 31 W (Tc) —
Kemasan / Case PG-TO252-3 (DPAK), Surface Mount —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Gate Charge (Qg) Ultra-low (per OptiMOS™ family spec) —
Output Charge (Qoss) Ultra-low (per OptiMOS™ family spec) —
Gambaran Suhu Operasi -55°C to +175°C (TJ max typical for OptiMOS) -55C to +150C
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Lead-Free Finish Yes —
Qualification Industrial (Infineon OptiMOS™ standard grade) —
Technology — OptiMOS (trench)
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) at TA=25C — 30 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=10V — 2.5 mΩ
RDS(on) typ at VGS=10V — 1.9 mΩ
Gate-Source Threshold (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TA=25C — 2.5 W
Power Dissipation (PD) at TC=25C — 125 W
Kemasan — PG-TDSON-8-1 (TDSON-8 FL)

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