IPD135N03LGATMA1 vs BSC019N04NSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD135N03LGATMA1 sa pamamagitan ng Infineon at BSC019N04NSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD135N03LGATMA1 IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 ✓ Nakahanda
Infineon
BSC019N04NSGATMA1 BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon

BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon

BSC019N04NSGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD135N03LGATMA1 BSC019N04NSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS™ —
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) 30 A (Tc) —
Power Dissipation (PD) 31 W (Tc) —
Packhaging / Kaso PG-TO252-3 (DPAK), Surface Mount —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Gate Charge (Qg) Ultra-low (per OptiMOS™ family spec) —
Output Charge (Qoss) Ultra-low (per OptiMOS™ family spec) —
Hanay ng Temperature na Operasyon -55°C to +175°C (TJ max typical for OptiMOS) -55C to +150C
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) —
Tindminan RoHS Compliant Compliant
Lead-Free Finish Yes —
Qualification Industrial (Infineon OptiMOS™ standard grade) —
Technology — OptiMOS (trench)
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) at TA=25C — 30 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=10V — 2.5 mΩ
RDS(on) typ at VGS=10V — 1.9 mΩ
Gate-Source Threshold (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TA=25C — 2.5 W
Power Dissipation (PD) at TC=25C — 125 W
Packhaging — PG-TDSON-8-1 (TDSON-8 FL)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita