IPD30N08S2L21ATMA1 vs IPD30N10S3L34ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD30N08S2L21ATMA1 disebabkan oleh Infineon dan IPD30N10S3L34ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD30N08S2L21ATMA1 IPD30N10S3L34ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
Jenis Transistor N-Channel MOSFET N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 75 V 100 V
Continuous Drain Current (ID) at Tc=25C 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 180 A
On-State Resistance (RDS(on)) at VGS=10 V 26 milliohm (typ) —
Gate Threshold Voltage (VGS(th)) Logic-level (L series) —
Gate Charge (Qg) typ 56 nC —
Power Dissipation (PD) at Tc=25C 136 W —
Gambaran Suhu Operasi -55C to +175C —
Maximum Junction Temperature +175C —
Kemasan PG-TO252-3-11 (DPAK-2) PG-TO252-3-11 (DPAK-2 / SC-63)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Drain tab + Gate + Source) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Status RoHS Compliant —
Aras MSL 1 1 (JEDEC J-STD-020, 260°C peak reflow)
Product Family — OptiMOS-T2
Continuous Drain Current (ID, Tc=25°C) — 30 A
Power Dissipation (PD, Tc=25°C) — 57 W
Drain-Source On-Resistance (RDS(on) max) — 31 mΩ @ VGS=10 V
Gate-Source Threshold Voltage (VGS(th) typ) — 1.7 V (range 1.0 V to 2.5 V)
Total Gate Charge (Qg typ) — 23 nC
Suhu Hubungan Operasi — -55°C to +175°C
RoHS / REACH — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — 100% Avalanche tested

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