IPD30N10S3L34ATMA2 vs IPD30N10S3L34ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD30N10S3L34ATMA2 disebabkan oleh Infineon dan IPD30N10S3L34ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, Tc) 30 A —
Pulsed Drain Current (I_DM) 180 A —
Power Dissipation (P_D, Tc) 57 W —
R_DS(on) max at V_GS=10V 31 mOhm (typ) —
Gate Threshold Voltage V_GS(th) max 2.4 V —
Total Gate Charge (Qg) max 31 nC —
Suhu Hubungan Operasi -55 C to +175 C -55°C to +175°C
Package / Supplier Device Package PG-TO252-3-11 (DPAK) —
Jenis Pemasangan Surface Mount Surface Mount
Pin / Tab Count 3 (2 + Tab) —
Technology OptiMOS-T (trench) —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Aras MSL [DATA_NEEDED: MSL level] 1 (JEDEC J-STD-020, 260°C peak reflow)
Status RoHS Compliant —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T2
Jenis Transistor — N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc=25°C) — 30 A
Pulsed Drain Current (IDM) — 180 A
Power Dissipation (PD, Tc=25°C) — 57 W
Drain-Source On-Resistance (RDS(on) max) — 31 mΩ @ VGS=10 V
Gate-Source Threshold Voltage (VGS(th) typ) — 1.7 V (range 1.0 V to 2.5 V)
Total Gate Charge (Qg typ) — 23 nC
Kemasan — PG-TO252-3-11 (DPAK-2 / SC-63)
RoHS / REACH — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — 100% Avalanche tested

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