IPD30N10S3L34ATMA2 vs IPD30N10S3L34ATMA1 比較
詳細並排比較 IPD30N10S3L34ATMA2 由 Infineon 與 IPD30N10S3L34ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD30N10S3L34ATMA2 | IPD30N10S3L34ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| Pulsed Drain Current (I_DM) | 180 A | — |
| Power Dissipation (P_D, Tc) | 57 W | — |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | — |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | — |
| Total Gate Charge (Qg) max | 31 nC | — |
| 工作接面溫度 | -55 C to +175 C | -55°C to +175°C |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | — |
| Technology | OptiMOS-T (trench) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| MSL 等級 | [DATA_NEEDED: MSL level] | 1 (JEDEC J-STD-020, 260°C peak reflow) |
| RoHS 狀態 | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T2 |
| 電晶體類型 | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 30 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| Power Dissipation (PD, Tc=25°C) | — | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | — | 31 mΩ @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | — | 23 nC |
| 封裝 | — | PG-TO252-3-11 (DPAK-2 / SC-63) |
| RoHS / REACH | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | 100% Avalanche tested |