IPD33CN10NGATMA1 vs IPD70N10S312ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD33CN10NGATMA1 disebabkan oleh Infineon dan IPD70N10S312ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD70N10S312ATMA2 - 100V 70A N-Ch OptiMOS Power MOSFET | Infineon
IPD70N10S312ATMA2 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD33CN10NGATMA1 | IPD70N10S312ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 27 A | 70 A |
| Power Dissipation (PD, Tc) | 58 W | — |
| Technology | OptiMOS (Trench) | OptiMOS-T Power-MOSFET (N-Channel) |
| Kemasan | PG-TO252-3 (DPAK), Surface Mount | PG-TO252-3-11 (DPAK) |
| Kiraan Pin | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (TJ) | -55C to +175C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical value] |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Aras MSL | 1 | 1 (unlimited floor life) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD70N10S312ATMA2 |
| Power Dissipation (Ptot, Tc=25C) | — | 125 W |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: typical RDS(on) at VGS=10V] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Channel Type | — | N-Channel Enhancement Mode |
| Avalanche Rated | — | Yes |