IPD33CN10NGATMA1 vs ISC080N10NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD33CN10NGATMA1 disebabkan oleh Infineon dan ISC080N10NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD33CN10NGATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 27 A | — |
| Power Dissipation (PD, Tc) | 58 W | — |
| Technology | OptiMOS (Trench) | — |
| Kemasan | PG-TO252-3 (DPAK), Surface Mount | PG-TDSON-8 FL (TDSON EP) |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (TJ) | -55°C to +175°C (TJ max, per datasheet) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 3.3 V at 36 µA |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Aras MSL | 1 | 1 (per JEDEC J-STD-020, per datasheet) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ 6 100V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 13 A |
| Continuous Drain Current (ID) at Tc | — | 75 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Boson Bebas | — | Yes |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |