IPD35N10S3L26ATMA1 vs BSC050N03LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD35N10S3L26ATMA1 disebabkan oleh Infineon dan BSC050N03LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD35N10S3L26ATMA1 BSC050N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD35N10S3L26ATMA1 BSC050N03LSGATMA1
Technology OptiMOS-T (N-channel enhancement mode trench MOSFET) OptiMOS 3 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 35 A —
Pulsed Drain Current (IDM) 180 A —
On-Resistance RDS(on) max at VGS=10 V 26 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 1.7 V —
Continuous Power Dissipation (PD) at TC=25°C 71 W —
Suhu Hubungan Operasi -55°C to +175°C —
Kemasan PG-TO252-3-11 (DPAK-2) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (up to 260°C peak reflow) 1
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% avalanche tested —
RoHS / Halogen-Free RoHS compliant, Green product (halogen-free) —
Typical Gate Charge (Qg) [DATA_NEEDED: typical Qg from datasheet] —
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 80 A
Continuous Drain Current (ID) at Ta — 18 A
On-State Resistance (RDS(on)) Max at VGS=10V — 5 mOhm
Power Dissipation (PD) at Tc — 50 W
Power Dissipation (PD) at Ta — 2.5 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Gambaran Suhu Operasi — -55 C to +150 C
Channel Type — N-Channel
Status RoHS — Compliant

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