IPD35N10S3L26ATMA1 vs BSC050N03LSGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD35N10S3L26ATMA1 sa pamamagitan ng Infineon at BSC050N03LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPD35N10S3L26ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPD35N10S3L26ATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD35N10S3L26ATMA1 | BSC050N03LSGATMA1 |
| Technology | OptiMOS-T (N-channel enhancement mode trench MOSFET) | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 35 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| On-Resistance RDS(on) max at VGS=10 V | 26 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.7 V | — |
| Continuous Power Dissipation (PD) at TC=25°C | 71 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | — |
| Packhaging | PG-TO252-3-11 (DPAK-2) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (up to 260°C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS / Halogen-Free | RoHS compliant, Green product (halogen-free) | — |
| Typical Gate Charge (Qg) | [DATA_NEEDED: typical Qg from datasheet] | — |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 80 A |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | — | 5 mOhm |
| Power Dissipation (PD) at Tc | — | 50 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Hanay ng Temperature na Operasyon | — | -55 C to +150 C |
| Channel Type | — | N-Channel |
| Tindminan RoHS | — | Compliant |