IPD50N04S408ATMA1 vs IPD50N03S4L06ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50N04S408ATMA1 disebabkan oleh Infineon dan IPD50N03S4L06ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD50N04S408ATMA1 IPD50N03S4L06ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS-T2 —
Polarity N-Channel —
Mode Enhancement-mode —
Drain-Source Voltage (V DS) 40 V —
Continuous Drain Current (I D, Tc) 50 A —
Power Dissipation (P D, Tc) 46 W —
Kemasan PG-TO252-3-313 (DPAK) PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +175 °C —
Aras MSL MSL1 (260 °C peak reflow) MSL1 (up to 260 C peak reflow)
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Tested 100 % Avalanche tested —
Green Package (RoHS) RoHS compliant —
Gate Threshold Voltage (V GS(th)) [DATA_NEEDED: V GS(th) typical] —
On-State Resistance (R DS(on)) [DATA_NEEDED: R DS(on) at V GS = 10 V] —
Total Gate Charge (Q G) [DATA_NEEDED: Q G typical] —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (V_DS) — 30 V
Continuous Drain Current (I_D, Tc) — 50 A
On-State Resistance (R_DS(on) max) — 5.5 mOhm at V_GS = 10 V
Gate Threshold Voltage (V_GS(th) typ) — 2.2 V
Total Gate Charge (Q_g) — 31 nC at V_GS = 10 V
Input Capacitance (C_iss) — 2.33 nF
Output Capacitance (C_oss) — 600 pF
Reverse Transfer Capacitance (C_rss) — 34 pF
Power Dissipation (P_D) — 56 W at Tc = 25 C
Suhu Hubungan Operasi — -55 C to +175 C
Avalanche Rating — 100% Avalanche Tested
Status RoHS — Compliant (Green Package)

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