IPD50N04S408ATMA1 vs IPD50N03S4L06ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD50N04S408ATMA1 sa pamamagitan ng Infineon at IPD50N03S4L06ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD50N04S408ATMA1 IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD50N04S408ATMA1 ✓ Nakahanda
Infineon
IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD50N04S408ATMA1 IPD50N03S4L06ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS-T2 —
Polarity N-Channel —
Mode Enhancement-mode —
Drain-Source Voltage (V DS) 40 V —
Continuous Drain Current (I D, Tc) 50 A —
Power Dissipation (P D, Tc) 46 W —
Packhaging PG-TO252-3-313 (DPAK) PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55 °C to +175 °C —
Level ng MSL MSL1 (260 °C peak reflow) MSL1 (up to 260 C peak reflow)
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Tested 100 % Avalanche tested —
Green Package (RoHS) RoHS compliant —
Gate Threshold Voltage (V GS(th)) [DATA_NEEDED: V GS(th) typical] —
On-State Resistance (R DS(on)) [DATA_NEEDED: R DS(on) at V GS = 10 V] —
Total Gate Charge (Q G) [DATA_NEEDED: Q G typical] —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (V_DS) — 30 V
Continuous Drain Current (I_D, Tc) — 50 A
On-State Resistance (R_DS(on) max) — 5.5 mOhm at V_GS = 10 V
Gate Threshold Voltage (V_GS(th) typ) — 2.2 V
Total Gate Charge (Q_g) — 31 nC at V_GS = 10 V
Input Capacitance (C_iss) — 2.33 nF
Output Capacitance (C_oss) — 600 pF
Reverse Transfer Capacitance (C_rss) — 34 pF
Power Dissipation (P_D) — 56 W at Tc = 25 C
Temperature ng Junction na Operasyon — -55 C to +175 C
Avalanche Rating — 100% Avalanche Tested
Tindminan RoHS — Compliant (Green Package)

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