IPD60R145CFD7ATMA1 vs IPD60R210PFD7SAUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R145CFD7ATMA1 disebabkan oleh Infineon dan IPD60R210PFD7SAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R145CFD7ATMA1 IPD60R210PFD7SAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology CoolMOS CFD7 (superjunction) Superjunction (CoolMOS) N-Channel Power MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
Kemasan TO-252AA (DPAK) surface mount —
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) —
Suhu Operasi -55C to +150C (junction) —
Jenis Pemasangan Surface Mount (DPAK, 3-pin + tab) Surface Mount (SMT)
Kiraan Pin 3 (Gate, Drain, Source) —
Series CoolMOS CFD7 —
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant —
Target Application ZVS / LLC resonant converters, soft switching —
Manufacturer — Infineon Technologies
Product Family — CoolMOS PFD7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc) — 16 A
On-Resistance (RDS(on), max) — 210 mOhm
Power Dissipation (Ptot, Tc=25C) — 64 W
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Package Type — TO-252 (DPAK)
Manufacturer Package Designator — PG-TO252-3-344
Pin Configuration — 3-Pin (2+Tab) - Gate, Drain (tab), Source
Gambaran Suhu Operasi — -55C to +150C (TJ)
Lead-Free / RoHS — Yes (compliant)
Application Segment — Consumer-grade SMPS

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga