IPD60R380C6ATMA1 vs IPD50R380CEAUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R380C6ATMA1 disebabkan oleh Infineon dan IPD50R380CEAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R380C6ATMA1 IPD50R380CEAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction CoolMOS CE (super-junction)
FET Type N-Channel —
Kemasan PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Drain-Source Voltage (V(BR)DSS) — 500 V
Continuous Drain Current (Id) at Tc=25C — 14.1 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: Idm]
On-State Resistance (RDS(on)) max at VGS=10V — 380 mΩ
Total Power Dissipation (Ptot) at Tc=25C — 98 W
Suhu Hubungan Operasi — -55C to +150C
Channel Type — N-Channel
AEC-Q101 Automotive — Not qualified (CE variant; use CE-A for automotive)
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL level]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga