IPD80R280P7ATMA1 vs ISC011N04NM7VATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD80R280P7ATMA1 disebabkan oleh Infineon dan ISC011N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD80R280P7ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | OptiMOS 7 Power-Transistor |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS P7) | Trench MOSFET, silicon |
| Drain-Source Voltage (V_DS) | 800 V | — |
| Continuous Drain Current (I_D, Tc) | 17 A | — |
| R_DS(on) max at V_GS=10V | 280 mOhm | — |
| Power Dissipation (P_D, Tc) | 101 W | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Kemasan | PG-TO252-3 (DPAK) | PG-TDSON-8 (source-down) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55C to +150C | — |
| ESD Protection | Integrated (per datasheet) | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C (TJ) |
| RoHS Compliance | — | Compliant (per Infineon product page) |