IPD90N03S4L02ATMA1 vs IPD031N06L3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90N03S4L02ATMA1 disebabkan oleh Infineon dan IPD031N06L3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD90N03S4L02ATMA1 IPD031N06L3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide), OptiMOS-T2 trench MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at Tc 90 A —
Power Dissipation (PD) at Tc 136 W —
RDS(on) Max at VGS=10 V 2.2 mΩ —
RDS(on) Max at VGS=4.5 V [DATA_NEEDED: typical value at VGS=4.5 V] —
Gate Drive Voltage (VGS) 4.5 V to 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical value] 1.0 V to 2.2 V
Suhu Hubungan Operasi -55°C to +175°C —
Avalanche Rated 100% Avalanche tested —
Kemasan PG-TO252-3-11 (DPAK, surface mount) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) 1 (Unlimited)
Status RoHS Compliant (Green Package) Compliant
Automotive Qualification AEC-Q101 qualified —
Series OptiMOS-T2 OptiMOS 3
Continuous Drain Current (ID) at TC=25°C — 100 A
Pulsed Drain Current (IDM) — 400 A
Maximum Power Dissipation (PD) at TC=25°C — 167 W
RDS(on) Max at VGS=10V — 3.1 mΩ
Gate Drive Voltage (Max RDS(on)) — 4.5 V, 10 V
Total Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typical value]
Gambaran Suhu Operasi — -55°C to +175°C

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