IPD90N03S4L02ATMA1 vs IPD031N06L3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD90N03S4L02ATMA1 sa pamamagitan ng Infineon at IPD031N06L3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPD90N03S4L02ATMA1 IPD031N06L3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide), OptiMOS-T2 trench MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at Tc 90 A —
Power Dissipation (PD) at Tc 136 W —
RDS(on) Max at VGS=10 V 2.2 mΩ —
RDS(on) Max at VGS=4.5 V [DATA_NEEDED: typical value at VGS=4.5 V] —
Gate Drive Voltage (VGS) 4.5 V to 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical value] 1.0 V to 2.2 V
Temperature ng Junction na Operasyon -55°C to +175°C —
Avalanche Rated 100% Avalanche tested —
Packhaging PG-TO252-3-11 (DPAK, surface mount) PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) 1 (Unlimited)
Tindminan RoHS Compliant (Green Package) Compliant
Automotive Qualification AEC-Q101 qualified —
Series OptiMOS-T2 OptiMOS 3
Continuous Drain Current (ID) at TC=25°C — 100 A
Pulsed Drain Current (IDM) — 400 A
Maximum Power Dissipation (PD) at TC=25°C — 167 W
RDS(on) Max at VGS=10V — 3.1 mΩ
Gate Drive Voltage (Max RDS(on)) — 4.5 V, 10 V
Total Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typical value]
Hanay ng Temperature na Operasyon — -55°C to +175°C

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