IPD90N04S403ATMA1 vs IPD50N03S4L06ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90N04S403ATMA1 disebabkan oleh Infineon dan IPD50N03S4L06ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD90N04S403ATMA1 | IPD50N03S4L06ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | 30 V |
| Continuous Drain Current (I_D, Tc) | 90 A | 50 A |
| On-State Resistance (R_DS(on)) | 3.2 mOhm typical at V_GS = 10 V | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 94 W | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Kemasan | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55C to +175C | -55 C to +175 C |
| Aras MSL | MSL1 (peak reflow up to 260C) | MSL1 (up to 260 C peak reflow) |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | — |
| RoHS Compliance | Compliant (Green Package) | — |
| Technology | Trench MOSFET (OptiMOS-T2) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| On-State Resistance (R_DS(on) max) | — | 5.5 mOhm at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th) typ) | — | 2.2 V |
| Total Gate Charge (Q_g) | — | 31 nC at V_GS = 10 V |
| Input Capacitance (C_iss) | — | 2.33 nF |
| Output Capacitance (C_oss) | — | 600 pF |
| Reverse Transfer Capacitance (C_rss) | — | 34 pF |
| Power Dissipation (P_D) | — | 56 W at Tc = 25 C |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Rating | — | 100% Avalanche Tested |
| Status RoHS | — | Compliant (Green Package) |