IPD90N04S403ATMA1 vs IPD50N03S4L06ATMA1 Comparison
Detailed side-by-side comparison of IPD90N04S403ATMA1 by Infineon and IPD50N03S4L06ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD90N04S403ATMA1 | IPD50N03S4L06ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | 30 V |
| Continuous Drain Current (I_D, Tc) | 90 A | 50 A |
| On-State Resistance (R_DS(on)) | 3.2 mOhm typical at V_GS = 10 V | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 94 W | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55C to +175C | -55 C to +175 C |
| MSL Level | MSL1 (peak reflow up to 260C) | MSL1 (up to 260 C peak reflow) |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | — |
| RoHS Compliance | Compliant (Green Package) | — |
| Technology | Trench MOSFET (OptiMOS-T2) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| On-State Resistance (R_DS(on) max) | — | 5.5 mOhm at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th) typ) | — | 2.2 V |
| Total Gate Charge (Q_g) | — | 31 nC at V_GS = 10 V |
| Input Capacitance (C_iss) | — | 2.33 nF |
| Output Capacitance (C_oss) | — | 600 pF |
| Reverse Transfer Capacitance (C_rss) | — | 34 pF |
| Power Dissipation (P_D) | — | 56 W at Tc = 25 C |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS Status | — | Compliant (Green Package) |