IPD90N04S403ATMA1 vs IPD50N03S4L06ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPD90N04S403ATMA1 tarafından Infineon ve IPD50N03S4L06ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPD90N04S403ATMA1 | IPD50N03S4L06ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | 30 V |
| Continuous Drain Current (I_D, Tc) | 90 A | 50 A |
| On-State Resistance (R_DS(on)) | 3.2 mOhm typical at V_GS = 10 V | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 94 W | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Paket | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Jant Sıcaklığı | -55C to +175C | -55 C to +175 C |
| MSL Seviyesi | MSL1 (peak reflow up to 260C) | MSL1 (up to 260 C peak reflow) |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | — |
| RoHS Compliance | Compliant (Green Package) | — |
| Technology | Trench MOSFET (OptiMOS-T2) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| On-State Resistance (R_DS(on) max) | — | 5.5 mOhm at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th) typ) | — | 2.2 V |
| Total Gate Charge (Q_g) | — | 31 nC at V_GS = 10 V |
| Input Capacitance (C_iss) | — | 2.33 nF |
| Output Capacitance (C_oss) | — | 600 pF |
| Reverse Transfer Capacitance (C_rss) | — | 34 pF |
| Power Dissipation (P_D) | — | 56 W at Tc = 25 C |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS Durumu | — | Compliant (Green Package) |