IPD90P04P4L04ATMA2 vs IPD50P04P413ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90P04P4L04ATMA2 disebabkan oleh Infineon dan IPD50P04P413ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD90P04P4L04ATMA2 IPD50P04P413ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD90P04P4L04ATMA2 —
Manufacturer Infineon Technologies —
Family OptiMOS-P2 —
Channel Type P-Channel —
Drain-Source Voltage (Vds) -40 V —
Continuous Drain Current (Id) at Tc=25C -90 A —
Power Dissipation (Pd) at Tc=25C 125 W —
On-State Resistance Rds(on) typ at Vgs=-10V 4.3 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical value] —
Maximum Junction Temperature 175 C —
Gambaran Suhu Operasi -55 C to +175 C -55 °C to +175 °C
Kemasan PG-TO252-3-313 (DPAK) PG-TO252-3-313 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 3 (2 + Tab) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] 1
Polarity / Device Type — P-Channel MOSFET
Technology — OptiMOS-P2 (Trench)
Drain-Source Voltage (VDS) — -40 V
Continuous Drain Current (TC=25°C, ID) — 50 A
Continuous Drain Current (TC=100°C, ID) — [DATA_NEEDED: ID @ 100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
Power Dissipation (TC=25°C, Ptot) — 58 W
On-State Resistance (RDS(on)) @ VGS=-10V — 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V — [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate-Source Voltage (VGS) max — ±20 V
Maximum Junction Temperature (TJ,max) — 175 °C
Standard Pack Quantity (13" reel) — 2500 pcs

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