IPL60R105P7AUMA1 vs IPL60R180P6AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R105P7AUMA1 disebabkan oleh Infineon dan IPL60R180P6AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPL60R105P7AUMA1 IPL60R180P6AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS P7 —
Technology Superjunction (SJ) N-Channel Power MOSFET CoolMOS P6 (Superjunction N-channel MOSFET)
Drain-Source Voltage (VDS) 600 V 600 V
On-Resistance (RDS(on)) max 105 mΩ —
Continuous Drain Current (ID) at Tc 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
Power Dissipation (Ptot) at Tc 137 W —
Gate Threshold Voltage (VGS(th)) typ 3.5 V —
Gate Charge (Qg) typ 45 nC —
Gambaran Suhu Operasi -55C to +150C —
Kemasan PG-VSON-4 (4-pin SMD with exposed pad) PG-VSON-4 (Thin-PAK) surface mount
Jenis Pemasangan Surface Mount Surface Mount
Channel Type N-Channel —
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Boson Bebas Yes —
Lead-Free Yes Yes
Gate-Source Voltage (VGS) — -20 V to +20 V (max)
Continuous Drain Current (ID) at Tc=25°C — 22.4 A
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V — 180 mΩ
Power Dissipation (Ptot) at Tc=25°C — 176 W
Gambaran Suhu Hubungan Operasi — -55 °C to +150 °C
Storage Temperature Range — -55 °C to +150 °C
Thermal Resistance Junction-to-Case (RθJC) — [DATA_NEEDED: RθJC value]
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V (typical 3.0 V)
MSL (Moisture Sensitivity Level) — MSL 1 (per JEDEC J-STD-020)

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