IPN60R360P7SATMA1 vs IPD65R380E6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN60R360P7SATMA1 disebabkan oleh Infineon dan IPD65R380E6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPN60R360P7SATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS™ E6 |
| Technology | Superjunction (SJ) N-Channel MOSFET | Superjunction (CoolMOS™) |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-Resistance RDS(on) max | 360 mΩ | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Continuous Drain Current (ID) at TA=25°C | [DATA_NEEDED: ID at TA=25°C with standard PCB] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC=25°C | 7 W | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (QG) | [DATA_NEEDED: QG typical at VGS=10V] | — |
| Gambaran Suhu Operasi | -55°C to +150°C (TJ) | -55 °C to +150 °C |
| Kemasan | PG-SOT223 (Surface Mount) | PG-TO252-3 (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated cell) | — |
| Boson Bebas | Yes (per Infineon datasheet) | — |
| RoHS Compliance | Compliant | — |
| Kiraan Pin | 3 functional + tab (PG-SOT223) | — |
| Body Diode | Integrated, fast-recovery | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| Status RoHS | — | Compliant |
| Aras MSL | — | 1 |