IPN60R360P7SATMA1 vs IPD65R380E6ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPN60R360P7SATMA1 tarafından Infineon ve IPD65R380E6ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPN60R360P7SATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS™ E6 |
| Technology | Superjunction (SJ) N-Channel MOSFET | Superjunction (CoolMOS™) |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-Resistance RDS(on) max | 360 mΩ | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Continuous Drain Current (ID) at TA=25°C | [DATA_NEEDED: ID at TA=25°C with standard PCB] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC=25°C | 7 W | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (QG) | [DATA_NEEDED: QG typical at VGS=10V] | — |
| İşletim Sıcaklığı Aralığı | -55°C to +150°C (TJ) | -55 °C to +150 °C |
| Paket | PG-SOT223 (Surface Mount) | PG-TO252-3 (DPAK), surface mount |
| Montaj Türü | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated cell) | — |
| Klorürsüz | Yes (per Infineon datasheet) | — |
| RoHS Compliance | Compliant | — |
| Pin Sayısı | 3 functional + tab (PG-SOT223) | — |
| Body Diode | Integrated, fast-recovery | — |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| RoHS Durumu | — | Compliant |
| MSL Seviyesi | — | 1 |