IPP200N15N3GXKSA1 vs IPP075N15N3GXKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP200N15N3GXKSA1 disebabkan oleh Infineon dan IPP075N15N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP200N15N3GXKSA1 IPP075N15N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS max) 150 V —
Continuous Drain Current (ID max, Tc) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance (RDS(on) max) 20 mOhm at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Gate Charge (Qg typ) [DATA_NEEDED: Qg typical] —
Total Power Dissipation (Ptot max, Tc=25C) 150 W —
Technology OptiMOS 3 N-Channel MOSFET (OptiMOS 3)
Channel Type N-Channel —
Kemasan TO-220-3 (PG-TO220-3), through-hole PG-TO220-3 (TO-220 through-hole)
Gambaran Suhu Hubungan Operasi -55 C to +175 C —
Jenis Pemasangan Through Hole Through Hole
Status RoHS Compliant —
Lead-Free Yes —
Aras MSL Not Applicable (through-hole) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Gambaran Suhu Operasi — [DATA_NEEDED: junction operating temperature range]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

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