IPP60R180P7XKSA1 vs BSC016N06NSTATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP60R180P7XKSA1 disebabkan oleh Infineon dan BSC016N06NSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP60R180P7XKSA1 BSC016N06NSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology CoolMOS P7 (Superjunction N-Channel) OptiMOS 5
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25°C 18 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current at TC=25°C] —
On-Resistance RDS(on) max at VGS=10V 180 mΩ —
Gate Threshold Voltage VGS(th) typ 3.5 V —
Gate Charge Qg typ [DATA_NEEDED: total gate charge at VGS=10V] —
Power Dissipation PD at TC=25°C 72 W —
Gambaran Suhu Operasi -55 °C to +150 °C -55 C to +150 C
Kemasan PG-TO220-3 (through-hole) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Jenis Pemasangan Through Hole Surface Mount
Bilangan Pin 3 (Gate, Drain, Source) —
Avalanche Energy Rated Yes —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Aras MSL N/A (through-hole) [DATA_NEEDED: MSL level]
Part Number — BSC016N06NSTATMA1
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 31 A
On-Resistance RDS(on) max (VGS=10V) — 1.6 mOhm
Power Dissipation (Tc) — 167 W
Power Dissipation (Ta) — 3 W
Series — OptiMOS

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