IPP60R180P7XKSA1 vs BSC016N06NSTATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP60R180P7XKSA1 sa pamamagitan ng Infineon at BSC016N06NSTATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP60R180P7XKSA1 - 600V 18A 180mΩ CoolMOS P7 MOSFET | Infineon
IPP60R180P7XKSA1 ✓ NakahandaInfineon
BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon
BSC016N06NSTATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPP60R180P7XKSA1 | BSC016N06NSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | CoolMOS P7 (Superjunction N-Channel) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25°C] | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation PD at TC=25°C | 72 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | -55 C to +150 C |
| Packhaging | PG-TO220-3 (through-hole) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Bilang ng Pins | 3 (Gate, Drain, Source) | — |
| Avalanche Energy Rated | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Level ng MSL | N/A (through-hole) | [DATA_NEEDED: MSL level] |
| Part Number | — | BSC016N06NSTATMA1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Continuous Drain Current (ID, Ta=25C) | — | 31 A |
| On-Resistance RDS(on) max (VGS=10V) | — | 1.6 mOhm |
| Power Dissipation (Tc) | — | 167 W |
| Power Dissipation (Ta) | — | 3 W |
| Series | — | OptiMOS |