IPP60R180P7XKSA1 vs BSC016N06NSTATMA1 Comparison
Detailed side-by-side comparison of IPP60R180P7XKSA1 by Infineon and BSC016N06NSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPP60R180P7XKSA1 | BSC016N06NSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | CoolMOS P7 (Superjunction N-Channel) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25°C] | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation PD at TC=25°C | 72 W | — |
| Operating Temperature Range | -55 °C to +150 °C | -55 C to +150 C |
| Package | PG-TO220-3 (through-hole) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Through Hole | Surface Mount |
| Number of Pins | 3 (Gate, Drain, Source) | — |
| Avalanche Energy Rated | Yes | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Level | N/A (through-hole) | [DATA_NEEDED: MSL level] |
| Part Number | — | BSC016N06NSTATMA1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Continuous Drain Current (ID, Ta=25C) | — | 31 A |
| On-Resistance RDS(on) max (VGS=10V) | — | 1.6 mOhm |
| Power Dissipation (Tc) | — | 167 W |
| Power Dissipation (Ta) | — | 3 W |
| Series | — | OptiMOS |