IPT059N15N3ATMA1 vs IPP075N15N3GXKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT059N15N3ATMA1 disebabkan oleh Infineon dan IPP075N15N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPT059N15N3ATMA1 IPP075N15N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS™ 3 (trench) N-Channel MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) max 150 V —
Continuous Drain Current (ID) at TC=25°C 155 A —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 5.9 mΩ —
Power Dissipation (PD) at TC=25°C 375 W —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg typical] —
Kemasan PG-HSOF-8-1 (TOLL / TO-Leadless) PG-TO220-3 (TO-220 through-hole)
Jenis Pemasangan Surface Mount Through Hole
Gambaran Suhu Operasi -55 °C to +175 °C (TJ max 175 °C) [DATA_NEEDED: junction operating temperature range]
Kiraan Pin 8 + exposed source tab —
Status RoHS Compliant —
Aras MSL 1 —
Automotive Qualified No (industrial grade; non-AEC-Q) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

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