IPTG025N15NM6ATMA1 vs IPT015N10NF2SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPTG025N15NM6ATMA1 disebabkan oleh Infineon dan IPT015N10NF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPTG025N15NM6ATMA1 IPT015N10NF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Technology OptiMOS 6 150 V (N-channel trench) OptiMOS trench, N-channel enhancement
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 150 V 100 V
Continuous Drain Current (ID) at TA=25C 26 A —
Continuous Drain Current (ID) at TC=25C 264 A (pulsed) —
Power Dissipation (PD) at TA=25C 3.8 W —
Power Dissipation (PD) at TC=25C 395 W —
On-State Resistance RDS(on) typ 2.5 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) value] —
Total Gate Charge Qg typ [DATA_NEEDED: Qg value] —
Kemasan PG-HSOG-8-1 (TOLG) PG-HSOF-8-10 (9-pin, 8+tab)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C (typical for OptiMOS 6) -55 °C to +175 °C
Status RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Solder Joint Reliability Excellent - 30% smaller footprint than D2PAK —
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 315 A
Continuous Drain Current (ID, Ta) — 35 A
On-Resistance (RDS(on)) at VGS=10V — 1.5 mΩ
Gate-Source Threshold (VGS(th)) — 3.8 V at 267 µA
Total Power Dissipation (Ta) — 3.8 W
Total Power Dissipation (Tc) — 300 W
Gate Drive Voltage (typ) — 10 V
Tenaga Gesa tunggal padek — [DATA_NEEDED: EAS value]

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