IPTG025N15NM6ATMA1 vs IPT017N12NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPTG025N15NM6ATMA1 disebabkan oleh Infineon dan IPT017N12NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPTG025N15NM6ATMA1 | IPT017N12NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 6 150 V (N-channel trench) | OptiMOS 6 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 120 V |
| Continuous Drain Current (ID) at TA=25C | 26 A | — |
| Continuous Drain Current (ID) at TC=25C | 264 A (pulsed) | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 395 W | — |
| On-State Resistance RDS(on) typ | 2.5 mOhm at VGS=10 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg value] | — |
| Kemasan | PG-HSOG-8-1 (TOLG) | PG-HSOF-8 (TOLL) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 C to +175 C (typical for OptiMOS 6) | — |
| Status RoHS | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | — |
| Solder Joint Reliability | Excellent - 30% smaller footprint than D2PAK | — |
| Part Number | — | IPT017N12NM6ATMA1 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 331 A |
| On-Resistance RDS(on) max | — | 1.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 395 W |
| Suhu Operasi | — | -55C to +175C |
| Kiraan Pin | — | 8 + tab |
| Packaging | — | Tape & Reel |