IPTG025N15NM6ATMA1 vs IPT017N12NM6ATMA1 比較

詳細並排比較 IPTG025N15NM6ATMA1 由 Infineon 與 IPT017N12NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPTG025N15NM6ATMA1 IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon

IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon

IPTG025N15NM6ATMA1 ✓ 啟用中
Infineon
IPT017N12NM6ATMA1 IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon

IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon

IPT017N12NM6ATMA1 ✓ 啟用中

規格比較

參數 IPTG025N15NM6ATMA1 IPT017N12NM6ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 6 150 V (N-channel trench) OptiMOS 6
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 150 V 120 V
Continuous Drain Current (ID) at TA=25C 26 A —
Continuous Drain Current (ID) at TC=25C 264 A (pulsed) —
Power Dissipation (PD) at TA=25C 3.8 W —
Power Dissipation (PD) at TC=25C 395 W —
On-State Resistance RDS(on) typ 2.5 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) value] —
Total Gate Charge Qg typ [DATA_NEEDED: Qg value] —
封裝 PG-HSOG-8-1 (TOLG) PG-HSOF-8 (TOLL)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55 C to +175 C (typical for OptiMOS 6) —
RoHS 狀態 Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Solder Joint Reliability Excellent - 30% smaller footprint than D2PAK —
Part Number — IPT017N12NM6ATMA1
電晶體類型 — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — 331 A
On-Resistance RDS(on) max — 1.7 mOhm
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 395 W
工作溫度 — -55C to +175C
腳位數 — 8 + tab
Packaging — Tape & Reel

資料表與資源

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