IPTG025N15NM6ATMA1 vs ISZ072N06NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPTG025N15NM6ATMA1 disebabkan oleh Infineon dan ISZ072N06NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISZ072N06NM6ATMA1 ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPTG025N15NM6ATMA1 ISZ072N06NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 6 150 V (N-channel trench) OptiMOS 6 trench MOSFET
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) 150 V 60 V
Continuous Drain Current (ID) at TA=25C 26 A —
Continuous Drain Current (ID) at TC=25C 264 A (pulsed) —
Power Dissipation (PD) at TA=25C 3.8 W —
Power Dissipation (PD) at TC=25C 395 W —
On-State Resistance RDS(on) typ 2.5 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) value] —
Total Gate Charge Qg typ [DATA_NEEDED: Qg value] —
Kemasan PG-HSOG-8-1 (TOLG) PG-TSDSON-8-34 (TSDSON-8 FL)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C (typical for OptiMOS 6) -55C to +175C ( Tj max 175C )
Status RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Solder Joint Reliability Excellent - 30% smaller footprint than D2PAK —
Product Family — OptiMOS 6 60V
Continuous Drain Current (ID, Tc=25°C) — 57 A
Continuous Drain Current (ID, Ta) — 12.7 A
RDS(on) max @ VGS=10V — 7.2 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V (typ)
Pembuangan Kuasa (TC=25°C) — 50 W
Power Dissipation (Ta) — 2.5 W
Aras MSL — 1

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