IPZ40N04S53R1ATMA1 vs ISC011N06LM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPZ40N04S53R1ATMA1 disebabkan oleh Infineon dan ISC011N06LM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPZ40N04S53R1ATMA1 IPZ40N04S53R1ATMA1 - 40V 40A OptiMOS 5 N-MOSFET | Infineon

IPZ40N04S53R1ATMA1 - 40V 40A OptiMOS 5 N-MOSFET | Infineon

IPZ40N04S53R1ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPZ40N04S53R1ATMA1 ISC011N06LM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5
Drain-to-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D) at Tc=25 C 40 A —
Power Dissipation (P_D) at Tc=25 C 71 W —
R_DS(on) max at V_GS=10 V, I_D=20 A 3.1 mOhm —
Drive Voltage (Max R_DS on, Min R_DS on) 7 V, 10 V —
Maximum V_GS +/-20 V —
Gambaran Suhu Operasi -55 C to +175 C -55C to +175C
Kemasan PG-TSDSON-8 (5x6 mm) with exposed pad PG-TDSON-8-17 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (260 C peak reflow) [DATA_NEEDED: MSL level]
Qualification AEC-Q101 automotive —
Avalanche Tested 100 % —
RoHS Compliance Compliant (Green Product) —
Series OptiMOS 5 (IPZ family) —
Manufacturer — Infineon Technologies
Part Number — ISC011N06LM5ATMA1
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta — 37 A
Continuous Drain Current (ID) at Tc — 288 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 188 W
RDS(on) max at VGS=10V — 1.15 mOhm
Kiraan Pin — 8
Status RoHS — Compliant
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

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