IQDH29NE2LM5CGSCATMA1 vs IQDH35N03LM5SCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH29NE2LM5CGSCATMA1 disebabkan oleh Infineon dan IQDH35N03LM5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQDH29NE2LM5CGSCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| Kemasan | PG-WHTFN-9-U02 (WHTFN EP) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Kiraan Pin | 9 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Gambaran Suhu Operasi | — | -55 C to +175 C |
| Marking | — | IQDH35N03LM5S |