IQDH88N06LM5CGSCATMA1 vs BSC0502NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH88N06LM5CGSCATMA1 disebabkan oleh Infineon dan BSC0502NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQDH88N06LM5CGSCATMA1 BSC0502NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 5 (trench) OptiMOS 5 (Trench MOSFET)
Drain-Source Voltage (V(BR)DSS) 60 V —
Continuous Drain Current (Ta=25°C) 42 A —
Arus Kumpal Tetap (TC=25°C) 447 A —
On-Resistance RDS(on) typical @ VGS=10V 0.86 mΩ —
Power Dissipation (Ta=25°C) 3 W —
Pembuangan Kuasa (TC=25°C) 333 W —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] —
Gate Charge Qg typical [DATA_NEEDED: Qg typical nC] —
Gambaran Suhu Operasi -55°C to +175°C (TJ) -55C to +150C
Kemasan PG-WHTFN-9-U02 (PQFN 5x6) PG-TDSON-8 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 9 (with exposed pad) —
Cooling Dual-side cooling capable —
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Polarity N-Channel —
Configuration Single —
FET Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TC — 100 A
Continuous Drain Current (ID) at TA — 26 A
RDS(on) Max at VGS=10V — 2.3 mOhm
Gate Charge QG (0V to 4.5V) Typ — 9.0 nC
Output Charge QOSS Typ — 13.5 nC
Power Dissipation at TA (Ta=25C) — 2.5 W
Power Dissipation at TC (Tc=25C) — 43 W
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]

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