IQDH88N06LM5CGSCATMA1 vs BSC0502NSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQDH88N06LM5CGSCATMA1 sa pamamagitan ng Infineon at BSC0502NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon
IQDH88N06LM5CGSCATMA1 ✓ NakahandaInfineon
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQDH88N06LM5CGSCATMA1 | BSC0502NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (Trench MOSFET) |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Patuloy na Drain Current (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Pwersang Pinahihigpit (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C (TJ) | -55C to +150C |
| Packhaging | PG-WHTFN-9-U02 (PQFN 5x6) | PG-TDSON-8 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Tindminan RoHS | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Continuous Drain Current (ID) at TA | — | 26 A |
| RDS(on) Max at VGS=10V | — | 2.3 mOhm |
| Gate Charge QG (0V to 4.5V) Typ | — | 9.0 nC |
| Output Charge QOSS Typ | — | 13.5 nC |
| Power Dissipation at TA (Ta=25C) | — | 2.5 W |
| Power Dissipation at TC (Tc=25C) | — | 43 W |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: VGS(th) typical value] |