IQDH88N06LM5CGSCATMA1 vs IQD020N10NM5CGSCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH88N06LM5CGSCATMA1 disebabkan oleh Infineon dan IQD020N10NM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon
IQD020N10NM5CGSCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQDH88N06LM5CGSCATMA1 | IQD020N10NM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 5 (trench) | — |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Arus Kumpal Tetap (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Pembuangan Kuasa (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Gambaran Suhu Operasi | -55°C to +175°C (TJ) | — |
| Kemasan | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 100V (IQD series) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 276 A |
| Continuous Drain Current (ID, Ta) | — | 26 A |
| On-Resistance (RDS(on), max) | — | 2.0 mOhm at VGS = 10 V |
| On-Resistance (RDS(on)) - JLCPCB listing | — | 1.8 mOhm at VGS = 10 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.8 V |
| Gate Charge (Qg, total) | — | 107 nC at VGS = 10 V |
| Input Capacitance (Ciss) | — | 7.3 nF |
| Output Capacitance (Coss) | — | 1 nF |
| Reverse Transfer Capacitance (Crss) | — | 42 pF |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Gate Drive Level | — | Logic-level (10 V VGS rated) |