IQE013N04LM6ATMA1 vs IPB35N10S3L26ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE013N04LM6ATMA1 disebabkan oleh Infineon dan IPB35N10S3L26ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPB35N10S3L26ATMA2 IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE013N04LM6ATMA1 IPB35N10S3L26ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS N-channel trench MOSFET —
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (Ta) 31 A —
Continuous Drain Current (Tc) 205 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 107 W —
On-Resistance RDS(on) max [DATA_NEEDED: RDS(on) max value at VGS=10V] —
On-Resistance RDS(on) typ 1.35 mΩ @ VGS=10 V, ID=20 A —
Gate Threshold Voltage (VGS(th)) 2 V (typ) —
Kemasan PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down PG-TO263-3-2 (D2PAK)
Gambaran Suhu Operasi -55 °C to +175 °C -55C to +175C
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Source-Down Topology Yes (flip-chip die attach, drain on top thermal pad) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS Power-Transistor
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tc — 35 A
Arus Alir Gesa — 180 A
Power Dissipation (Pd) at Tc — 71 W
RDS(on) (typical) — 26.3 mOhm
Bilangan Pin — 3
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]
Automotive Qualified — Yes (per Infineon product page classification)

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