IQE018N06NM6CGATMA1 vs IPT015N10NF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE018N06NM6CGATMA1 disebabkan oleh Infineon dan IPT015N10NF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IQE018N06NM6CGATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 178 A | — |
| Continuous Drain Current (I_D, Ta) | 25 A | — |
| R_DS(on) max (V_GS=10 V) | 1.8 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 125 W | — |
| Kemasan | PG-TTFN-9-3 (TOLL/TTFN) | PG-HSOF-8-10 (9-pin, 8+tab) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55 °C to +175 °C |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS trench, N-channel enhancement |
| RoHS Compliance | Compliant | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 315 A |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| Gate Drive Voltage (typ) | — | 10 V |
| Tenaga Gesa tunggal padek | — | [DATA_NEEDED: EAS value] |
| Status RoHS | — | Compliant |